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Solar Thin Film Photovoltaics


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Patent US10032949


Issued 2018-07-24

Photovoltaic Device Based On Ag2znsn(s,se)4 Absorber

Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.



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1 Independent Claim

  • 1. A method for forming a photovoltaic device, the method comprising the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer comprising Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer, wherein the method further comprises the step of: forming a Na-containing layer on the substrate prior to performing the contacting step.