Enjoy your
FREE PREVIEW which shows only 2022 data and 25 documents. Contact
Patent Forecast for full access.
Solar Thin Film Photovoltaics
Search All Patents in Solar Thin Film Photovoltaics
Patent US10084107
Issued 2018-09-25
Transparent Conducting Oxide For Photovoltaic Devices
One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.
Much More than Average Length Specification
View the Patent Matrix® Diagram to Explore the Claim Relationships
USPTO Full Text Publication >
- 1. A photovoltaic structure, comprising:
a Si base layer; a p-type doped amorphous Si layer positioned on a first side of the Si base layer; an n-type doped semiconductor layer positioned on a second side of the Si base layer; a first transparent-conductive-oxide layer positioned on and in direct contact with the p-type doped amorphous Si layer, wherein the first transparent-conductive-oxide layer has a work function that is greater than 5.7 eV and less than to 6.1 eV, thereby reducing potential barriers for carriers at an interface between the p-type doped amorphous Si layer and the first transparent-conductive-oxide layer; and a second transparent-conductive-oxide layer positioned on and in direct contact with the n-type doped semiconductor layer, wherein the second transparent-conductive-oxide layer has a work function that is lower than the work function of the first transparent-conductive-oxide layer.
