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Solar Thin Film Photovoltaics
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Patent US10217878
Issued 2019-02-26
Tri-layer Semiconductor Stacks For Patterning Features On Solar Cells
Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.
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- 1. A back contact solar cell, comprising:
a substrate; a semiconductor structure disposed above the substrate, the semiconductor structure comprising a P-type semiconductor layer disposed directly on a first semiconductor layer, and a third semiconductor layer disposed directly on the P-type semiconductor layer, wherein an outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width, and wherein an outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the first semiconductor layer to the outermost edge of the third semiconductor layer; and a conductive contact structure electrically connected to the semiconductor structure, wherein the semiconductor structure is vertically stacked with the first semiconductor layer between the P-type semiconductor layer and the substrate, the P-type semiconductor layer between the first and third semiconductor layers, and the third semiconductor layer between the P-type semiconductor layer and the conductive contact structure; wherein the first semiconductor layer is a first intrinsic silicon layer, the P-type semiconductor layer is a boron-doped silicon layer, and the third semiconductor layer is a second intrinsic silicon layer.
- 11. A back contact solar cell, comprising:
a substrate; a semiconductor structure disposed above the substrate, the semiconductor structure comprising a second semiconductor layer disposed directly on a first semiconductor layer, and a third semiconductor layer disposed directly on the second semiconductor layer, wherein an outermost edge of the third semiconductor layer has a non-reentrant profile, an outermost edge of the second semiconductor layer has a non-reentrant profile extending beyond the outermost edge of the third semiconductor layer by a width, and an outermost edge of the first semiconductor layer has a non-reentrant profile and does not undercut the second semiconductor layer, and wherein the non-reentrant profiles of the first and third semiconductor layers are steeper than the non-reentrant profile of the second semiconductor layer; and a conductive contact structure electrically connected to the semiconductor structure, wherein the semiconductor structure is vertically stacked with the first semiconductor layer between the second semiconductor layer and the substrate, the second semiconductor layer between the first and third semiconductor layers, and the third semiconductor layer between the second semiconductor layer and the conductive contact structure; wherein the first semiconductor layer is a first intrinsic silicon layer, the second semiconductor layer is a P-type boron-doped silicon layer, and the third semiconductor layer is a second intrinsic silicon layer.
