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Solar Thin Film Photovoltaics
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Application US20150083202
Published 2015-03-26
Manufacture Of Multijunction Solar Cell Devices
The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure; detaching the first engineered substrate; removing the second substrate; and bonding a third substrate to the at least one first solar cell layer.
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- 1. A method for manufacturing a multi-junction solar cell device comprising the steps of:
providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure; detaching the first engineered substrate; removing the second substrate; and bonding a third substrate to the at least one first solar cell layer.
- 14. A multi-junction solar cell device obtainable by the method comprising the following steps:
providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure; detaching the first engineered substrate; removing the second substrate; and bonding a third substrate to the at least one first solar cell layer.
- 15. An intermediate semiconductor substrate for a multi-junction solar cell comprising:
a first substrate comprising GaAs or Ge; a fourth solar cell layer, a third solar cell layer, a second solar cell layer, and a first solar cell layer disposed in this sequence on the first substrate, wherein the first solar cell layer comprises GaInAs, and/or the second solar cell layer comprises GaInAsP, and/or the third solar cell layer comprises GaAs, and/or the fourth solar cell layer comprises GaInP.
- 17. An intermediate semiconductor substrate, comprising:
a first substrate comprising InP; a first solar cell layer, a second solar cell layer, a third solar cell layer, and a fourth solar cell layer disposed in this sequence on the first substrate, wherein the first solar cell layer comprises GaInAs, and/or the second solar cell layer comprises GaInAsP, and/or the third solar cell layer comprises GaAs, and/or the fourth solar cell layer comprises GaInP.
- 18. An intermediate semiconductor substrate, comprising:
a first substrate comprising InP; a first solar cell layer, a second solar cell layer, a third solar cell layer, and a fourth solar cell layer disposed in this sequence on the first substrate, wherein the first solar cell layer comprises GaInAs, and/or the second solar cell layer comprises GaInAsP, and/or the third solar cell layer comprises GaAs, and/or the fourth solar cell layer comprises GaInP; and a handling substrate comprising a glass material disposed on the fourth solar cell layer.
- 19. A method for manufacturing a multi-junction solar cell device comprising the steps of:
providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding a handling substrate to the second wafer structure at the at least one second solar cell layer; detaching the second substrate to obtain a third wafer structure, wherein the detachment is performed by etching and/or grinding and followed by thinning by polishing; bonding the third wafer structure to the first wafer structure at the at least one first solar cell layer and the at least one second solar cell layer; detaching the first engineered substrate to obtain a fourth wafer structure; bonding the fourth wafer structure at the at least one first solar cell layer to a final substrate; and detaching the handling substrate.
- 20. A method for manufacturing a multi-junction solar cell device comprising the steps of:
providing a first substrate comprising a bulk InP substrate; providing a second engineered substrate comprising a sapphire substrate including a zipper layer, wherein the second engineered substrate comprises a GaAs seed layer; forming at least a first solar cell layer on the first substrate to obtain a first wafer structure; forming at least a second solar cell layer on the seed layer to obtain a second wafer structure; bonding the first wafer structure and the second wafer structure at the at least one first solar cell layer and the at least one second solar cell layer to obtain a bonded structure; detaching the first substrate from the bonded structure; detaching the second engineered substrate; and bonding a third substrate to the at least one first solar cell layer.