Enjoy your
FREE PREVIEW which shows only 2022 data and 25 documents. Contact
Patent Forecast for full access.
Solar Thin Film Photovoltaics
Search All Applications in Solar Thin Film Photovoltaics
Application US20170133547
Published 2017-05-11
Fabricating Thin-film Optoelectronic Devices With Modified Surface
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
Much More than Average Length Specification
View the Patent Matrix® Diagram to Explore the Claim Relationships
USPTO Full Text Publication >
- 1. A method of fabricating thin-film optoelectronic devices, the method comprising:
providing a substrate; forming a back-contact layer; forming at least one absorber layer, which absorber layer is made of an ABC chalcogenide material, wherein A represents elements of group 11 of the periodic table of chemical elements as defined by the International Union of Pure and Applied Chemistry including Cu and Ag, B represents elements in group 13 of the periodic table including In, Ga, and Al, and C represents elements in group 16 of the periodic table including S, Se, and Te; adding at least one alkali metal; and forming at least one cavity at the surface of the absorber layer, wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal.
- 9. A thin-film optoelectronic device, comprising:
a substrate; a back-contact layer; at least one absorber layer, which absorber layer is made of an ABC chalcogenide material, wherein A represents elements of group 11 of the periodic table of chemical elements as defined by the International Union of Pure and Applied Chemistry including Cu and Ag, B represents elements in group 13 of the periodic table including In, Ga, and Al, and C represents elements in group 16 of the periodic table including S, Se, and Te: at least one alkali metal; and at least one cavity at the surface of the absorber layer; wherein the form of said at least one cavity is the result of dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal.
