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Solar Thin Film Photovoltaics

Search All Applications in Solar Thin Film Photovoltaics


Application US20170330986


Published 2017-11-16

Intermetallic Bonded Multi-junction Structures

Multiple semiconductor p-n junctions may be built into a single structure to expand the optical capabilities of a device. For example, multi-junction solar cells have improved efficiencies and thus may be desirable for a variety of reasons. Typically, tunnel junctions have been used to connect the plurality of junctions in a two-terminal, layered structure, wherein the junctions are in series electrically and optically. This approach has a variety of drawbacks that lead to higher cost and complexity. The present disclosure embraces an intermetallic bonded multi-junction solar cell that eliminates the problems associated with tunnel junctions and offers additional improvements, such as, photon recycling, light trapping, and simplicity. The present disclosure can also be used as a substitute for wafer bonding with potential advantages for high solar concentration applications. It can also be used in bonding LED structures to achieve white light and dual color LEDs



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3 Independent Claims

  • 1. An intermetallic bonded multi-junction (MJ) solar cell, comprising: an upper junction; upper contacts deposited on a bottom surface of the upper junction and interconnected by an upper contact grid; upper pads deposited on (i) the upper contacts or (ii) the upper contacts and upper contact grid; a lower junction; lower contacts deposited on a top surface of the lower junction and interconnected by a lower contact grid; and lower pads deposited on (i) the lower contacts or (ii) the lower contacts and lower contact grid, wherein the upper pads and the lower pads are connected by an intermetallic bond.

  • 13. An intermetallic bonded multi-junction (MJ) structure, comprising: an upper junction; a first Indium pad connected to the bottom surface of the upper junction; a lower junction; lower contacts deposited on a top surface of the lower junction and interconnected by a lower contact grid; a second Indium pad covering the lower contacts and lower contact grid, wherein the first Indium pad and the second Indium pad are connected by an intermetallic bond.

  • 18. A method for forming an intermetallic bonded multi-junction (MJ) structure, comprising: providing a first junction and a second junction, wherein each junction includes indium pads; bringing the first junction's indium pads in contact with the second junction's indium pads; and forming an intermetallic bond between the first junction's indium pads and the second junction's indium pads.