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Solar Thin Film Photovoltaics
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Application US20180166602
Published 2018-06-14
Multijunction Solar Cell Having Patterned Emitter And Method Of Making The Solar Cell
A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.
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- 1. A multijunction solar cell, comprising:
a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type; a patterned emitter formed at a first surface of the base substrate, the patterned emitter comprising a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor, the base substrate including the patterned emitter forming a first solar subcell; and an upper structure comprising one or more additional solar subcells over the first solar subcell.
- 14. A method of making a multijunction solar cell, the method comprising:
providing a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type, the base substrate having a first major surface and a second major surface opposite the first major surface; forming a patterned emitter at the first major surface of the base substrate, the patterned emitter comprising a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor, the base substrate including the patterned emitter forming a first solar subcell; and forming an upper structure comprising one or more additional solar subcells over the first solar subcell.
- 21. A method of making a solar cell substrate, the method comprising:
providing a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type, the base substrate having a first major surface and a second major surface opposite the first major surface; forming a patterned emitter at the first major surface of the base substrate, the patterned emitter comprising a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor, the base substrate including the patterned emitter forming a solar subcell; and preparing the first major surface of the base substrate to receive an epitaxial layer.
- 25. A solar cell substrate, comprising:
a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type, the base substrate having a first major surface and a second major surface opposite the first major surface, the first major surface being epitaxially ready; and a patterned emitter formed at the first major surface of the base substrate, the patterned emitter comprising a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor, the base substrate including the patterned emitter forming a first solar subcell.
