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Solar Thin Film Photovoltaics
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Patent US9842956
Issued 2017-12-12
System And Method For Mass-production Of High-efficiency Photovoltaic Structures
One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.
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- 1. A method for fabricating a photovoltaic structure, comprising:
forming a sacrificial layer on a first side of a Si substrate; loading the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; forming a first doped Si layer on a second side of the Si substrate; subsequent to forming the first doped Si layer, removing the sacrificial layer that has been in contact with the wafer carrier; loading the Si substrate into the chemical vapor deposition tool; and forming a second doped Si layer on the first side of the Si substrate.
- 11. A fabrication system, comprising:
a first wet station configured to form a sacrificial layer on a first side of a plurality of photovoltaic structures; a first chemical vapor deposition tool configured to deposit a first doped Si layer on a second side of the photovoltaic structures, wherein a wafer carrier associated with the first vapor deposition tool is in contact with the sacrificial layer; a second wet station configured to remove the sacrificial layer; and a second chemical vapor deposition tool configured to deposit a second doped Si layer on the first side of the photovoltaic structures, wherein during deposition, a wafer carrier associated with the second vapor deposition tool is facing the first doped Si layer.
