Wafer-scale Integration Of Vacancy Centers For Spin Qubits
Embodiments of the present disclosure propose two methods for integrating vacancy centers (VCs) on semiconductor substrates for forming VC-based spin qubit devices. The first method is based on using a self-assembly process for integrating VC islands on a semiconductor substrate. The second method is based on using a buffer layer of a III-N semiconductor material over a semiconductor substrate, and then integrating VC islands in an insulating carbon-based material such as diamond that is either grown as a layer on the III-N buffer layer or grown in the openings formed in the III-N buffer layer. Integration of VC islands on semiconductor substrates typically used in semiconductor manufacturing according to any of these methods may provide a substantial improvement with respect to conventional approaches to building VC-based spin qubit devices and may promote wafer-scale integration of VC-based spin qubits for use in quantum computing devices.
Claim CLM-00001. 1. A spin qubit device assembly comprising:
a substrate including a semiconductor material; and at least one vacancy center (VC) island including an insulating carbon-based material having at least one VC, wherein at least a portion of the VC island is surrounded by the semiconductor material.
Claim CLM-00011. 11. A quantum integrated circuit (IC) package, comprising:
a semiconductor substrate; a first spin qubit and a second spin qubit, each comprising a vacancy center (VC) island that includes an insulating carbon-based material with a VC therein, wherein at least a portion of the VC island is surrounded by the semiconductor substrate; a resonator associated with the first spin qubit; and a resonator associated with the second spin qubit.
Claim CLM-00023. 23. A spin qubit device assembly comprising:
a semiconductor substrate; a buffer layer over the substrate, the buffer layer comprising a III-N material; and at least one vacancy center (VC) island including an insulating carbon-based material having at least one VC, wherein the VC island is over or at least partially in the III-N material.
Claim CLM-00031. 31. A quantum computing device, comprising:
a quantum processing device comprising a plurality of spin qubits; and a memory, configured to store data generated by the plurality of spin qubits during operation of the quantum processing device, wherein:
the quantum processing device includes a spin qubit device assembly that includes a semiconductor material, andeach of the plurality of spin qubits comprises a vacancy center (VC) island that includes an insulating carbon-based material having at least one VC, wherein the VC island is over or at least partially in the semiconductor material.
