Patent Forecast

1. A fluidic system comprising: (6) (3)

a substrate

a Bulk Acoustic Wave (BAW) resonator arranged over the substrate, the BAW resonator including: a first layer of piezoelectric material; and a top electrode; and

a sensing region acoustically coupled with the top electrode of the BAW resonator, in which a sensitivity of the fluidic system when the sensing region is exposed to fluid is within a range from approximately one half part per million per one hundred attograms to approximately fifty parts per million per one hundred attograms.

3. The fluidic system as in claim 1 in which the fluidic system is to detect at least one virus in a fluid comprising water. (0)

4. The fluidic system as in claim 1 in which the fluidic system is to detect at least one SARS-CoV-2 virus in a fluid comprising water. (0)

5. The fluidic system as in claim 1 in which the sensing region comprises a functionalized layer to facilitate binding to an analyte. (0)

8. The fluidic system as in claim 1 comprising a plurality of Bulk Acoustic Wave (BAW) resonators having respective sensing regions in which the plurality of Bulk Acoustic Wave resonators have respective resonant frequencies that are different from one another to facilitate identification of respective members of the plurality of Bulk Acoustic Wave resonators. (0)

11. The fluidic system as in claim 1 comprising a second layer of piezoelectric material, in which: (0) (2)

13. The fluidic system as in claim 1 in which the Bulk Acoustic Wave (BAW) resonator coupled with the sensing region is configured to have a thickness extensional main resonant mode. (0)

2. (canceled) (0)

6. (canceled) (0)

7. (canceled) (0)

9. (canceled) (0)

10. (canceled) (0)

12. (canceled) (0)

14. (canceled) (0)

15. A Micro Electro Mechanical System (MEMS) comprising: (3) (3)

a substrate;

a Bulk Acoustic Wave (BAW) resonator arranged over the substrate, the BAW resonator including: a top electrode; a first layer of piezoelectric material having a first piezoelectric axis orientation; and a second layer of piezoelectric material having a second piezoelectric axis orientation substantially opposing the first piezoelectric axis orientation of the first layer of piezoelectric material; and

a sensing region acoustically coupled with the top electrode of the BAW resonator.

20. The MEMS as in claim 15 in which the top electrode has a thickness selected so that the top electrode is a harmonic electrode to facilitate an enhanced quality factor of the BAW resonator. (0)

22. The MEMS as in claim 15 in which in which the first and second layers of piezoelectric material have respective thicknesses so that the main resonant frequency of the BAW resonator is in a super high frequency band or an extremely high frequency band. (0)

24. The MEMS as in claim 15 in which the BAW resonator comprises a third layer of piezoelectric material, in which the first, second and third layers of piezoelectric material have respective first, second and third piezoelectric axis orientations that substantially oppose one another in an alternating arrangement. (1) (0)

16-19. (canceled) (0)

21. (canceled) (0)

23. (canceled) (0)

26-29. (canceled) (0)

30. An apparatus comprising: (5) (4)

a substrate;

a Bulk Acoustic Wave (BAW) resonator arranged over the substrate, the BAW resonator including:

a first layer of piezoelectric material; and

a harmonically tuned top electrode.

31. An apparatus as in claim 30 comprising a sensing region acoustically coupled with the harmonically tuned top electrode of the BAW resonator. (1) (0)

37. The apparatus as in claim 30 in which in which the harmonically tuned top electrode is to facilitate suppressing parasitic lateral resonances. (0)

39. The apparatus as in claim 30 comprising a second layer of piezoelectric material having a second piezoelectric axis orientation, in which the first layer of piezoelectric material has a first piezoelectric axis orientation that substantially opposes the second piezoelectric axis orientation. (0)

40. The apparatus as in claim 30 in which: (0) (2)

41. The apparatus as in claim 30 in which: (0) (2)

32. (canceled) (0)

34-36. (canceled) (0)

38. (canceled) (0)

42. A system comprising: (10) (3)

a substrate;

a Bulk Acoustic Wave (BAW) resonator arranged over the substrate, the BAW resonator including: a first layer of piezoelectric material and a top electrode; and

a sensing region acoustically coupled with the top electrode of the BAW resonator, in which the top electrode is electrically and acoustically coupled with the first layer of piezoelectric material to excite a main resonant frequency of the BAW resonator coupled with the sensing region, and in which the main resonant frequency of the BAW resonator coupled with the sensing region is in a super high frequency band or an extremely high frequency band.

43. The system as in claim 42 in which the main resonant frequency of the BAW resonator coupled with the sensing region is approximately four gigahertz or higher. (0)

44. The system as in claim 42 in which the main resonant frequency of the BAW resonator coupled with the sensing region is approximately eight gigahertz or higher. (0)

45. The system as in claim 42 in which the main resonant frequency of the BAW resonator coupled with the sensing region is approximately twenty four gigahertz or higher. (0)

49. The system as in claim 42 in which the main resonant frequency of the BAW resonator coupled with the sensing region is in an Institute of Electrical and Electronic Engineers (IEEE) K band. (0)

50. The system as in claim 42 in which the main resonant frequency of the BAW resonator coupled with the sensing region is in an Institute of Electrical and Electronic Engineers (IEEE) Ka band. (0)

53. The system as in claim 42 in which the top electrode has sheet resistance of less than one Ohm per square. (0)

54. The system as in claim 42 in which a total quality factor of the BAW resonator including sheet resistance of the top electrode is within a range from approximately three hundred to approximately fifteen hundred. (0)

58. The system as in claim 42 in which: (0) (2)

60. The system as in claim 42 in which the sensing region is configured to sense an analyte present in a liquid. (0)

73. The system as in claim 42 in which the sensing region is configured to sense an analyte present in an air sample. (0)

46-48. (canceled) (0)

51. (canceled) (0)

52. (canceled) (0)

55-57. (canceled) (0)

59. (canceled) (0)

61-72. (canceled) (0)

Application US20210036678

STRUCTURES, ACOUSTIC WAVE RESONATORS, DEVICES AND SYSTEMS TO SENSE A TARGET VARIABLE, INCLUDING AS A NON-LIMITING EXAMPLE CORONA VIRUSES

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