Abstract: |
Embodiments of the present disclosure describe use of isotopically purified materials in donor- or acceptor-based spin qubit devices and assemblies. An exemplary spin qubit device assembly may include a semiconductor host layer that includes an isotopically purified material, a dopant atom in the semiconductor host layer, and a gate proximate to the dopant atom. An isotopically purified material may include a lower atomic-percent of isotopes with nonzero nuclear spin than the natural abundance of those isotopies in the non-isotopically purified material. Reducing the presence of isotopes with nonzero nuclear spin in a semiconductor host layer may improve qubit coherence and thus performance of spin qubit devices and assemblies. |
Inventor: |
Thomas, Nicole K. (Portland, OR, US); Clarke, James S. (Portland, OR, US); Torres, Jessica M. (Portland, OR, US); Lampert, Lester (Portland, OR, US); Pillarisetty, Ravi (Portland, OR, US); George, Hubert C. (Portland, OR, US); Singh, Kanwaljit (Rotterdam, NL); Roberts, Jeanette M. (North Plains, OR, US); Caudillo, Roman (Portland, OR, US); Yoscovits, Zachary R. (Beaverton, OR, US); Michalak, David J. (Portland, OR, US) |
Applicant: |
Intel Corporation (Santa Clara, CA, US) |
Face Assignee: |
Intel Corporation (Santa Clara, CA, US) |
Filed: |
2018-03-19 |
Issued: |
2019-08-20 |
Claims: |
25 |
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US10388848
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1. A spin qubit device assembly, comprising:
(7)
(4)
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21. A method of operating a spin qubit device assembly, the method comprising:
(1)
(3)
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23. A method of fabricating a spin qubit device assembly, the method comprising:
(2)
(4)
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