Donor- Or Acceptor-based Spin Qubits With Isotopically Purified Materials
Embodiments of the present disclosure describe use of isotopically purified materials in donor- or acceptor-based spin qubit devices and assemblies. An exemplary spin qubit device assembly may include a semiconductor host layer that includes an isotopically purified material, a dopant atom in the semiconductor host layer, and a gate proximate to the dopant atom. An isotopically purified material may include a lower atomic-percent of isotopes with nonzero nuclear spin than the natural abundance of those isotopies in the non-isotopically purified material. Reducing the presence of isotopes with nonzero nuclear spin in a semiconductor host layer may improve qubit coherence and thus performance of spin qubit devices and assemblies.
Claim CLM-00001. 1. A spin qubit device assembly, comprising:
a host layer that includes an isotopically purified material; a dopant atom in the host layer; a gate electrode material proximate to the dopant atom; and a gate dielectric material between the gate electrode material and the host layer, wherein a thickness of the gate dielectric material is between 0.5 and 10 nanometers.
Claim CLM-00021. 21. A method of operating a spin qubit device assembly, the method comprising:
providing electrical signals to one or more gates above a host layer as part of controlling a spin state of a first dopant atom included in the host layer, wherein the host layer is a part of a stack, the stack further includes a buffer layer, the host layer includes a first isotopically purified material, and at least one of the buffer layer and a gate dielectric material of the one or more gates includes a second isotopically purified material; allowing interaction between the first dopant atom and a second dopant atom included in the host layer; and determining the spin state of the first dopant atom or/and a spin state of the second dopant atom following the interaction.
Claim CLM-00023. 23. A method of fabricating a spin qubit device assembly, the method comprising:
providing a host layer over a substrate, where the host layer includes an isotopically purified material; implanting one or more dopant atoms in the host layer; providing one or more gates above the host layer; and providing a radiofrequency transmission line proximate to the one or more dopant atoms and configured to provide an oscillating magnetic field to control a spin state of the one or more dopant atoms.
